TCB's indium bonding techniques have been
developed and honed from years of experience in providing
solutions for sputtering target bonding applications.
We have driven the industry in developing higher performance
back side metallization techniques that improve the quality
of the bond.
Our proprietary back side metallization
of substrates ensures a reliable void-free bond. The tri-layer
coating creates excellent adhesion for all substrates and
establishes a barrier layer to prevent unwanted alloying with
the Indium from occurring. The result is improved adhesion
and increased thermal conductivity.
The high quality of our indium bonds
has given us a competitive edge and we now bond approximately
70% of the non-semiconductor bonded sputtering targets in
the US. Key advantages: low melting point; ability to creep
and remove stress as dissimilar materials cool; reduced warpage.